کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687950 | 1518761 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Vibrational lifetimes of the asymmetric stretch mode (1136 cm−1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm−1) local vibrational mode in the decay of the ν3 (1136 cm−1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm−1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 253, Issues 1–2, December 2006, Pages 200–204
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 253, Issues 1–2, December 2006, Pages 200–204
نویسندگان
K.K. Kohli, Gordon Davies, N.Q. Vinh, D. West, S.K. Estreicher, T. Gregorkiewicz, I. Izeddin, K.M. Itoh,