کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1687983 1010705 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
P2 dimer implantation in silicon: A molecular dynamics study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
P2 dimer implantation in silicon: A molecular dynamics study
چکیده انگلیسی

Using molecular dynamics simulations we investigate the influence of lattice-mediated vicinage effects in molecular P2 implantation events into silicon with energies in the low-keV range. We find that lattice-mediated vicinage effects are insignificant and hence that the dimer implantation can be closely approximated by two single-ion implantations a short distance apart. The simulations are applied to the technological problem of creating devices consisting of closely-spaced donors for the investigation of inter-donor coupling effects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 251, Issue 2, October 2006, Pages 395–401
نویسندگان
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