کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1688068 1010715 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(1 0 0) by atomic layer deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(1 0 0) by atomic layer deposition
چکیده انگلیسی
Using X-ray absorption spectroscopy we have investigated the local structure of Yb2O3 and Lu2O3 thin films deposited on Si(1 0 0) by means of atomic layer deposition. These two oxides, as well as those of the other rare earth elements, are considered among the high dielectric constant materials candidates to substitute SiO2 in ultra-scaled CMOS devices. We find that the films maintain the overall bixbyite structure of the bulk oxides, but exhibit significant distortions of the local structure depending on thickness and thermal treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 246, Issue 1, May 2006, Pages 90-95
نویسندگان
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