Standard AZ 5214E photoresist in laser interference and EBDW lithographies

• Applicability of the standard AZ 5214E photoresist for laser IL and EBDW lithography.
• Structures with period below 300 nm achieved by using the laser IL.
• Structures with period from 900 up to 269 nm achieved by simply changing the angle of incident beam.
• Various PhC symmetries obtained by multiple exposition during the sample rotation.
• Structures with period below 500 nm achieved with the EBDW lithography.

In this paper examples of the applicability of the standard AZ 5214E photoresist are shown. The resist is besides its sensitivity to UV radiation sensitive also to e-beam exposure. The arrays of patterns (holes and columns) were exposed in this photoresist by the experimentally produced Laser Interference Lithography method as well as by the Electron-Beam Direct Write Lithography. With both methods comparable results have been achieved with less than half micron spacing of the patterns, obtaining thus dimensions smaller than usually achieved by standard optical photolithography with the AZ 5214E photoresist.