کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1688313 | 1518958 | 2015 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE](/preview/png/1688313.png)
• InN epilayers were prepared on c-plane (0001) sapphire substrates by plasma-assisted MBE.
• The nitridation of the substrate impacted the qualities of InN flims.
• The energy band-gap of InN layers were found to be around 0.75–0.80 eV.
InN epilayers were prepared on c-plane (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). We studied the effect of nitridation on structure, surface morphology, electrical and optical properties of InN films using X-ray diffraction (XRD), Reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall and photoluminescence (PL) measurement. The results showed a significant improvement of the crystalline qualities and surface morphologies and enhancement of the electrical and optical properties for InN films grown after nitridation. Moreover, the energy band-gap of InN films were also determined by optical absorption and photoluminescence (PL) measurement.
Journal: Vacuum - Volume 111, January 2015, Pages 15–18