Development of low-pressure high-frequency plasma chemical vapor deposition method on surface modification of silicon wafer

• Development of low-pressure high-frequency plasma chemical vapor deposition method.
• Plasma surface treatment with the mixture of Ar and O2 gas.
• Low temperature during plasma surface treatment.
• We shown mechanism of low-pressure high-frequency plasma CVD for surface treatment.

Even though silicon based solar cell currently has more efficient, the dye sensitized solar cell is considerably cheaper for manufacturing because of its low cost materials and simplicity process of fabrication. In this paper, the development of plasma formed equipments for thin film material on flexible solar cell using low-pressure high-frequency plasma chemical vapor deposition method on the surface of Si wafer with the mixture of Ar gas and O2 gas is presented. The results indicate that using this method can be possible for surface modification.