Monophase γ-In2Se3 thin film deposited by magnetron radio-frequency sputtering

• Monophase γ-In2Se3 thin film with (00l) textured was prepared by sputtering.
• The ratio of In and Se element reaches to 2/3 at RF power over 80 W.
• The 80 W deposited films are free from Se loss at several substrate temperature.

In2Se3 is one of the most significant n-type layered semiconductor belonging to III–VI binary compound materials. In this paper, polycrystalline In2Se3 films were obtained by magnetron radio-frequency (RF) sputtering. The as-deposited films were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and optical measurements. The effects of RF power and substrate temperature on the film structure and properties were investigated. It was found that textured film was manufactured when the RF power was 80 W with the substrate temperature of 360 °C.