کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1688708 1011184 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ion sputter etching of ZnO:Ga thin film surfaces
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ion sputter etching of ZnO:Ga thin film surfaces
چکیده انگلیسی

In this article the modification of surface morphology of ZnO:Ga (GZO) thin films by ion sputter etching is presented. GZO thin films were prepared at room temperature on Corning glass substrates by both normal and oblique angle RF diode sputtering from ZnO:2%Ga ceramic target in Ar gas. Ion sputter etching was performed by RF re-sputtering of GZO thin films on substrates. During RF sputter etching, Ar pressure of 1.3 Pa and RF power of 250 W were kept constant, only the time of sputter etching was changed. Ion sputter etching had remarkable influence on surface morphology of GZO thin films: increase of roughness Rq and the “homogenization” of film surfaces, i.e. skewness (Rsk) and spikiness (Rku) parameters (Rsk ≈ 0/Rku ≈ 3).Surface root-mean-square roughness (Rq) increased from 15.3 nm (after sputter deposition) to 29.1 nm (after ion sputter etching). For obliquely thin films increased from 16.5 nm (after sputter deposition) to 38.2 nm. Changes of these parameters Rq, Rsk, Rku influenced optical properties of GZO films, increased Haze parameter up to values 7.7% and width of optical band gap 3.44 eV, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 86, Issue 6, 27 January 2012, Pages 703–706
نویسندگان
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