کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1688754 1011189 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
چکیده انگلیسی

We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 103, and a field-effect mobility of 18 cm2/Vs.


► Fabricated a-IGZO TFTs with a polymer gate dielectric prepared by spin coating.
► Discussed the electrical performance under different oxygen partial pressures.
► The transmittance of the deposited polymer film was greater than 90% at 600 nm.
► The polymer film used is optically usable as the gate dielectric of a-IGZO TFTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 86, Issue 3, 8 October 2011, Pages 246–249
نویسندگان
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