Growth of silicon carbide surface nanocrystals on silicon under high-temperature vacuum annealing

The formation and subsequent time-evolution of silicon carbide nanocrystals grown on a silicon surface by high-temperature vacuum annealing was investigated, with the effects of carbon contamination on the properties of these nanostructures being examined. The presence of higher contaminant levels during an annealing step was found to strongly enhance the nanocrystal growth rate, yet conversely to have no effect upon the density of nanocrystals which nucleated on the silicon surface. The physical structure of these objects was then studied in detail using high-resolution imaging and surface analysis techniques.

► Grew SiC nanocrystals on a silicon surface by high-temperature vacuum annealing.
► Investigated the effect of carbon contamination on the growth of these nanocrystals.
► Excess carbon supplied to the silicon surface resulted in much faster growth of surface nanocrystals.
► However, excess carbon supplied to silicon surface had no effect on the density of nanocrystals which nucleated on the surface.