Investigation of P3HT/n-Si heterojunction using surface photovoltage spectroscopy

Surface photovoltage spectroscopy (SPS) was used to investigate the interactions of the interface between regioregular poly(3-hexylthiophene) (P3HT) and n-type single crystalline silicon. The SPS responses of silicon and the P3HT/n-Si heterojunction caused by band to band transition of silicon are 30 mV and 160 mV respectively. The band-bending in the silicon side of the P3HT/n-Si structure is larger than that of bare n-Si. The density of the interface states of the P3HT/n-Si heterojunction increased significantly after the deposition of P3HT. Based on the contact potential difference (CPD) transient results, charge transport and separation processes are fast in the silicon substrate and slow in the P3HT layer respectively.

► Light-induced charge transfer of P3HT/n-Si heterojunction was studied using SPS.
► Band-bending of Si and interface states density increased after P3HT deposition.
► Charge transport and separation processes are fast in the Si and slow in the P3HT.
► The interface states are negatively charged when the P3HT layer is excited.