Influence of growth parameters on the microstructures of erbium films deposited on Si(111) substrates

► We have grown erbium films on single crystal Si at different deposition conditions. ► The microstructures of erbium films on Si are susceptible to substrate temperature. ► The triangular pinholes appear on film surface at temperature higher than 350 °C. ► The shape of pinhole is conforming to geometry of the underlying Si(111) substrate. ► The deposition time can affect the reaction of erbium film and Silicon substrate.