کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689069 | 1011214 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effect on crystallization behavior of cubic MgxZn1âxO films on A-plane and M-plane sapphire
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Cubic MgxZn1âxO thin films with Mg composition around 70% were deposited on A-plane and M-plane sapphire substrates by rf-reactive magnetron sputtering. Measured structural and optical properties of these thin films indicated an optimal annealing temperature of 700 °C which produced high quality cubic MgZnO thin films on both substrates. Moreover, when the annealing temperature exceeded 750 °C, a much rougher surface resulted, and several large mosaic particles on the surface of the annealed films appeared. From EDX results, the Mg composition was lower than that found in other sections of the annealed films. We attributed this to thermally induced reconstruction of the crystallites. This phenomenon was more obvious for annealed MgZnO films on A-plane sapphire than that on M-plane sapphire. Thermal expansion mismatch with the substrate is the principal reason.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 84, Issue 9, 19 April 2010, Pages 1149-1153
Journal: Vacuum - Volume 84, Issue 9, 19 April 2010, Pages 1149-1153
نویسندگان
S. Han, D.Z. Shen, J.Y. Zhang, Y.M. Zhao, D.Y. Jiang, Z.G. Ju, D.X. Zhao, B. Yao,