Ion beam induced mixing at Co/Si interface

Ion beam mixing has emerged as a technique for understanding reactivity and chemistry at metal/Si interface and may find its applications in the field of microelectronics. We have investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120 MeV Au+9 ion irradiation at different fluences, varying from 1012 to 1014 ions/cm2. Mixing was investigated by Rutherford Backscattering Spectroscopy (RBS) as a function of ion fluence and its mechanism across the interface is explained by the thermal spike model.