Efficient passivation of solar cells by silicon nitride

Using a symmetrical structure SiN/Si/SiN and Quasi-Steady-State Photo-Conductance (QSSPC) characterization we found that 380 °C and 4500 W are the optimal temperature and optimal power, respectively. The optimal refractive index was determined using a method which encompasses optical and electrical properties of SiN films deposited on multicrystalline silicon solar cells. This method, based on the calculation of the short circuit current densities, revealed that the optimal refractive index is 1.9.