کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689403 | 1011229 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bias enhanced nucleation of diamond thin films in a modified HFCVD reactor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In this study we investigated the nucleation of synthetic diamond thin films on Si substrates by double bias enhanced Hot Filament Chemical Vapour Deposition (HFCVD) method. First, we investigated the influence of the bias voltage and secondly the influence of the nucleation time under different bias voltages. The bias voltage was varied from â120Â V up to â220Â V as well as the nucleation time was changed from 30 up to 120Â min in order to obtain the optimized nucleation conditions for following growth of continuous diamond layer. Samples were analyzed by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. SEM was used for determination of cluster sizes and their distribution on the Si surface, while Raman Spectroscopy for determination and analysis of carbon phases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 84, Issue 1, 25 August 2009, Pages 49-52
Journal: Vacuum - Volume 84, Issue 1, 25 August 2009, Pages 49-52
نویسندگان
T. Ižák, M. Marton, M. Varga, M. Vojs, M. Veselý, R. Redhammer, M. Michalka,