A simple implement of submicron meter RRAM array based on porous SiO2 film with uniform and large pores

• Nano-template casting was used to fabricate small scale resistive switching (RS) array.
• Porous SiO2 template with large and uniform pores was fabricated with the assistance of NH4F.
• Plasma oxidation is used to grow TiO2 RS layer under high pristine vacuum condition.
• Individual RS cells with diameter of 400 nm are obtained with good and stable RS behavior.
• Cells are capable for low power consumption application, owing to the 10 nA writing current.

Resistive Random Access Memory (RRAM) array is considered as a promising trend for future memory devices. At present, the integration of RRAM array into CMOS circuit is limited by the density and scale of the memory element. In this paper, a new way to fabricate RRAM array with submicron meter range element size is proposed. Porous SiO2 film with large and uniform through-holes is prepared as nano-template for device fabrication. Plasma oxidation is utilized to grow 100 nm titanium oxide resistive switching (RS) layer. Discrete circular RS cells with diameter of 400 nm are obtained, with a vertical structure of AgTiO2TiPtTiSi, from top to bottom. Good and uniform RS properties are acquired by conductive Atomic Force Microscope (cAFM).