Beam plasma discharge at low magnetic field as plasma source for plasma processing reactor

The aims of the research are to study the nature of an effect detected earlier for the formation of ion flows from a beam plasma discharge and to determine possible applications of this effect. These flows propagate in a beam plasma discharge on a normal to the discharge axis. It has been found that the acceleration of ions is a consequence of the potential gradient between an area with a high level of microwave oscillations and a peripheral area of plasma. The results of physical experiments qualitatively correlate with computer simulation data. The analysis of the physical mechanism of the effect has enabled a way of effective control of the flow energy and density to be found. The capability to change the mean energy of the ion flow in the range from 20 up to 70 eV with increase in its density by an order has been demonstrated. A possible application of the effect is a novel plasma processing reactor for treatment of materials used in electronics engineering. In particular, soft etching technology of AlGaAs barrier layers in semiconducting AlGaAs/InGaAs/GaAs heterostructures has been demonstrated.