Enhanced resistive switching behaviors of HfO2:Cu film with annealing process

• The enhanced RS behaviors were demonstrated for the doped film.
• The improved distribution of switch voltages were obtained due to annealing process.
• The defects induced by Cu dopants played an important role on RS characteristics.
• The RS behaviors of the films were illustrated by filamentary model.

The effects of Cu doping and annealing process on crystal structure and resistive switching (RS) characteristics of HfO2 films fabricated by RF magnetron sputtering were investigated. The chemical compositions of the films were characterized by X-ray photoelectron spectroscopy. The defects induced by Cu dopants played an important role on the RS characteristics. The enhanced ON/OFF ratio and reduced switch voltages were demonstrated for the doped film. The further annealing process for HfO2:Cu film not only decreased the switch voltages but also improved the distribution of the switch voltages of the film. The RS behaviors of HfO2:Cu films can be well explained by space charge limited current (SCLC) effect.