کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689899 | 1518950 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22Â nm and beyond nodes CMOS technology
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22Â nm and beyond nodes CMOS technology Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22Â nm and beyond nodes CMOS technology](/preview/png/1689899.png)
چکیده انگلیسی
In this work, tantalum nitride (TaN) was chosen as the wet etch stop layer (WESL) for its application in the 22Â nm and beyond nodes CMOS technology. TaN WESL prevents the attacking of titanium nitride (TiN)/hafnium dioxide (HfO2) stack covering n-channel MOS (nMOS) regions from selectively stripping work function metals of p-channel MOS (pMOS) gate, i.e. TiN & titanium (Ti), by ammonia hydrogen peroxide mixture (APM) solution. In terms of etching selectivity to TiN & Ti, gate filling capability and work function tuning for both nMOS and pMOS, the properties of TaN films prepared by different methods such as physical vapor deposition (PVD) and atomic layer deposition (ALD) were investigated systematically.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 119, September 2015, Pages 185-188
Journal: Vacuum - Volume 119, September 2015, Pages 185-188
نویسندگان
Hushan Cui, Jun Luo, Jing Xu, Jianfeng Gao, Jinjuan Xiang, Zhaoyun Tang, Xiaolei Wang, Yihong Lu, Xiaobin He, Tingting Li, Bo Tang, Jiahan Yu, Tao Yang, Jiang Yan, Junfeng Li, Chao Zhao, Tianchun Ye,