کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689901 | 1518950 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TCR control of Ni-Cr resistive film deposited by DC magnetron sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: TCR control of Ni-Cr resistive film deposited by DC magnetron sputtering TCR control of Ni-Cr resistive film deposited by DC magnetron sputtering](/preview/png/1689901.png)
چکیده انگلیسی
The temperature coefficient of resistance (TCR) is a major and important characteristic of thin film resistors. In this study, we focus on the dependence of TCR on different Ni-Cr film thickness and different annealing conditions. The electron mean free path (MFP) of Ni-Cr film has been determinate. Field Emission Scanning Electron Microscopy (FE-SEM) has been used in studying the morphology of the Ni-Cr film; X-ray diffraction (XRD) has been similarly employed in studying the transformation of the crystallite phase. The TCR performance is stable as the Ni-Cr film thickness is thicker than the electron MFP, and increases slightly as the annealing temperature increases. The 30 nm thickness of Ni-Cr film was annealed at 300 °C; in this phase, metastable amorphous and crystalline film was formed. We obtained the thin film resistors of low TCR under ±5 ppm/°C at â55 and 125 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 119, September 2015, Pages 200-203
Journal: Vacuum - Volume 119, September 2015, Pages 200-203
نویسندگان
Nai-Chuan Chuang, Jyi-Tsong Lin, Huey-Ru Chen,