کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689960 | 1011247 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of O2/Ar ratio on the structure and properties of hafnium dioxide (HfO2) films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
HfO2 films at various O2/Ar flow ratios were prepared by reactive dc magnetron sputtering. The effects of O2/Ar ratio on the structure and properties of HfO2 films were studied using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-Visible spectroscopy. The results showed that the HfO2 films were amorphous at different O2/Ar ratios, and the atomic ratio of O/Hf in the HfO2 films at high O2/Ar ratio was nearly to 2:1. The peaks of Hf4f and O1s shifted to higher binding energy with increasing the oxygen flow proportion. The HfO2 films at high O2/Ar ratio had high transmissivity at the range of 400–1100 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 81, Issue 3, 24 October 2006, Pages 211–214
Journal: Vacuum - Volume 81, Issue 3, 24 October 2006, Pages 211–214
نویسندگان
Zhibing He, Weidong Wu, Hua Xu, Jicheng Zhang, Yongjian Tang,