کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689977 | 1011247 | 2006 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of process parameters and post deposition annealing on the optical, structural and microwave dielectric properties of RF magnetron sputtered (Ba0.5,Sr0.5)TiO3 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Thin films of (Ba0.5,Sr0.5)TiO3 (BST5) in the thickness range 400-800 nm have been deposited by RF magnetron sputtering on to quartz substrates at ambient temperature. All the properties investigated, i.e. structure, microstructure, optical and microwave dielectric, show a critical dependence on the processing and post processing parameters. The surface morphology as studied by atomic force microscopy reveals ultra fine grains in the case of as deposited films and coarse grain morphology on annealing. The as-deposited films are X-ray amorphous and exhibit refractive index in the range 1.9-2.04 with an optical absorption edge value between 3.8 and 4.2 eV and a maximum dielectric constant of 35 at 12 GHz. The dispersion in refractive index fits into the single effective oscillator model while the variation in the optical parameters with oxygen percentage in the sputtering gas can be explained on the basis of packing fraction changes. On annealing the films at 900 °C they crystallize in to the perovskite structure accompanied by a decrease in optical band gap, increase in refractive index and increase in the microwave dielectric constant. At 12 GHz the highest dielectric constant achieved in the annealed films is 175. It is demonstrated that with increasing oxygen-mixing percentage in the sputtering gas, the microwave dielectric loss decreases while the dielectric constant increases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 81, Issue 3, 24 October 2006, Pages 307-316
Journal: Vacuum - Volume 81, Issue 3, 24 October 2006, Pages 307-316
نویسندگان
K. Venkata Saravanan, K. Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, Anil K. Bhatnagar,