کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690081 | 1011250 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier transport mechanisms and photovoltaic characteristics of p-H2Pc/n-Si heterojunctions
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Carrier transport mechanisms and photovoltaic characteristics of p-H2Pc/n-Si heterojunctions Carrier transport mechanisms and photovoltaic characteristics of p-H2Pc/n-Si heterojunctions](/preview/png/1690081.png)
چکیده انگلیسی
Heterojunction cells of p-H2Pc/n-Si were fabricated by vacuum deposition of p-H2Pc thin films onto n-Si single crystals. Measurements of the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics have been evaluated to identify the mechanisms of barrier formation and, consequently, current flow. The forward current involves tunneling and could be explained by a multi-step tunneling recombination model due to a high density of interface defects. The C-V characteristics indicate an abrupt heterojunction model. The devices exhibit strong photovoltaic characteristics with an open-circuit voltage of 0.34Â V, a short-circuit current density of 17.5Â mA/cm2 and a power conversion efficiency of 1.5%. These parameters have been estimated at room temperature and under constant illumination of 150Â mW/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 81, Issue 1, 16 September 2006, Pages 8-12
Journal: Vacuum - Volume 81, Issue 1, 16 September 2006, Pages 8-12
نویسندگان
M.M. El-Nahass, A.M. Farid, A.A.M. Farag, H.A.M. Ali,