کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1690090 1011250 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical properties and DC electrical conductivity of Ge28−xSe72Sbx thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Optical properties and DC electrical conductivity of Ge28−xSe72Sbx thin films
چکیده انگلیسی

Thin films of Ge28−xSe72Sbx (x=0, 8, 16, 24 at%) with thickness of 200 nm are prepared by thermal evaporation onto glass substrates under vacuum of 5.3×10−5 mbar. Optical reflectance and transmittance of these films are measured at room temperature in the light wavelength region from 200 to 1100 nm. The estimated optical energy gap, Eg, is found to decrease from 2 eV (0 at% Sb) to 1.5 eV (24 at% Sb), whereas the band tail width, Ee, increases from 0.062 to 0.077 eV, respectively. The refractive index, n, and extinction coefficient, κ, are determined as functions of wavelength. The DC electrical conductivity, σ, of films is measured as a function of temperature in the range from 300 to 360 K. The extracted value of activation energy, ΔE, is found to decrease from 0.95 eV (0 at% Sb) to 0.74 eV (24 at% Sb). Optical and electrical behavior of films can be explained in terms of cohesive energy (CE) and Se–Se defect bonds.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 81, Issue 1, 16 September 2006, Pages 54–58
نویسندگان
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