Evaluation of pinhole defect in DLC film prepared by hybrid process of plasma-based ion implantation and deposition

Pinhole defect in diamond-like carbon (DLC) film prepared by a hybrid process of plasma-based ion implantation and deposition using toluene plasma was evaluated by the critical passivation current density in the anodic polarization method. The area ratio of pinhole defects to the SUS304 bare substrate was decreased exponentially with increasing DLC film thickness and reached about 3×10-6%3×10-6% at 11μm film thickness. As a result, it is found that the corrosion resistance of DLC-coated specimens was improved with increasing film thickness. The production of an interfacial mixing layer by ion implantation from methane and acetylene plasmas between the DLC film and the substrate material reduced pinhole defects in the film.