Magnetic properties of manganese implanted silicon after pulse plasma annealing

Silicon samples were implanted with up to 6E+16 cm−2 of 190 keV manganese and next treated with plasma pulses of duration about 1 μs and energy density up to 4 J cm−2. Channelled RBS spectra measured after pulse treatment reveal nearly perfect recovery of crystalline order with manganese segregated towards the surface and occupying non-substitutional positions. SQUID magnetization measurements show the formation of paramagnetic phase of concentration increasing with the applied manganese fluence.

► Silicon samples were implanted with manganese and annealed by plasma pulses.
► They show good crystallinity, and non-substitutional location of manganese atoms.
► The presence of paramagnetic phase growing with the implant fluence is revealed.