High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition

Microcrystalline silicon (μc-Si) films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD), and the deposition rate, microstructure and electrical properties of the deposited films were investigated. It was demonstrated that a high deposition rate of over 20 nm/s can be achieved while maintaining high crystallinity and low dark conductivity. The deposition rate is well controlled by regulating the generation rate and transport of growth precursors. High crystallinity of the films results principally from hydrogen-induced chemical annealing. Furthermore, the excellent electrical properties benefit from the low oxygen content and/or low deposition temperature.

► High deposition rate of μc-Si film was obtained at low temperature by jet-ICPCVD.
► High rate, high crystallinity, low dark conductivity can be simultaneously obtained.
► Deposition rate is controlled by the generation rate and transport of precursors.
► High crystallinity results principally from hydrogen-induced chemical annealing.
► Low deposition temperature and low oxygen content favor the low dark conductivity.