Growth of β-FeSi2 thin films on silicon (100) substrate for different annealing times by pulsed laser deposition

► β-FeSi2 films were fabricated on silicon (100) substrates by PLD and post-annealing. ► XRD intensity reached a threshold and then decreased as annealing time increased. ► SEM revealed a smooth surface after 9 h annealing. ► Optimal photoluminescence was obtained after 9 h annealing process. ► PL properties were associated with the crystalline quality and surface morphologies.