کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1690597 1011268 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Selection of metal ion irradiation for controlling Ti1−xAlxN alloy growth via hybrid HIPIMS/magnetron co-sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Selection of metal ion irradiation for controlling Ti1−xAlxN alloy growth via hybrid HIPIMS/magnetron co-sputtering
چکیده انگلیسی

We demonstrate, for the first time, the growth of metastable single-phase NaCl-structure high-AlN-content Ti1−xAlxN alloys (x ≤ 0.64) which simultaneously possess high hardness and low residual stress. The films are grown using a hybrid approach combining high-power pulsed magnetron (HPPMS/HIPIMS) and dc magnetron sputtering of opposing metal targets. With HIPIMS applied to the Al target, Aln+ ion irradiation (dominated by Aln+) of the growing film results in alloys 0.55 ≤ x ≤ 0.60 which exhibit hardness H ∼ 30 GPa and low stress σ = 0.2–0.7 GPa, tensile. In sharp contrast, films with corresponding AlN concentrations grown with HIPIMS applied to the Ti target, giving rise to Tin+ ion irradiation (with a significant Ti2+ component), are two-phase – cubic (Ti,Al)N and hexagonal AlN – with low hardness, H = 18–19 GPa, and high compressive stress ranging up to 2.7 GPa. Annealing alloys grown with HIPIMS applied to the Al target results in age hardening due to spinodal decomposition; the hardness of Ti0.41Al0.59N increases from 30 to 33 GPa following a 900 °C anneal.


► High-AlN-content Ti1−xAlxN alloys with high hardness and low stress are grown.
► Hybrid HIPIMS/DCMS configuration with elemental metal targets is used.
► Different growth pathways are obtained depending upon which target is ran in HIPIMS.
► Destructive role of Ti2+ ions for film properties is demonstrated.
► Al-HIPIMS/Ti-DCMS alloys have high kinetic solid-solubility limit, xmax = 0.64.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 86, Issue 8, 29 February 2012, Pages 1036–1040
نویسندگان
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