Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

► Highly-quality InN films are deposited with the interlayer of AZO films on glass. ► AZO films as a buffer layer is effective to the epitaxial growth of InN films. ► The Highly-quality InN films are successfully achieved In flux of 5.5 sccm. ► The InN/AZO structure have potential for the development of full spectra solar cells.