Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4

► High deposition rate silicon carbide thin films were prepared by hot wire CVD technique. ► High intensity Si-C stretching bonds were observed in the films. ► Multiphase SiC thin film was grown at higher methane flow rate. ► Nano-crystalline SiC formed at low methane and silane flow rates without using hydrogen. ► The Methane flow rate was an important parameter to control the structural properties of the film.