کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1690785 1011277 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of crystalline HgCr2S4 thin films at mild reaction conditions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Growth of crystalline HgCr2S4 thin films at mild reaction conditions
چکیده انگلیسی

Thin films of crystalline HgCr2S4 have been deposited on glass substrates at low temperature as low as 65 °C using a chemical bath deposition method. Typical thickness of the deposited HgCr2S4 thin films was 264 nm.The films were composed of closely packed irregular grains of 165–175 nm in diameter. The X-ray diffraction analysis and the selected area electron diffraction analysis revealed the deposited thin films were polycrystalline with highly (2 2 0) preferential orientation. The films exhibit a pure faint black. Their direct band gap energy was 2.39 eV with room temperature electrical resistivity of the order of 10−3 Ω cm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 80, Issue 9, 20 June 2006, Pages 962–966
نویسندگان
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