کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690785 | 1011277 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of crystalline HgCr2S4 thin films at mild reaction conditions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Thin films of crystalline HgCr2S4 have been deposited on glass substrates at low temperature as low as 65 °C using a chemical bath deposition method. Typical thickness of the deposited HgCr2S4 thin films was 264 nm.The films were composed of closely packed irregular grains of 165–175 nm in diameter. The X-ray diffraction analysis and the selected area electron diffraction analysis revealed the deposited thin films were polycrystalline with highly (2 2 0) preferential orientation. The films exhibit a pure faint black. Their direct band gap energy was 2.39 eV with room temperature electrical resistivity of the order of 10−3 Ω cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 80, Issue 9, 20 June 2006, Pages 962–966
Journal: Vacuum - Volume 80, Issue 9, 20 June 2006, Pages 962–966
نویسندگان
R.S. Mane, V.V. Todkar, C.D. Lokhande, S.S. Kale, Sung-Hwan Han,