Transparent amorphous conductive Cd-In-Sb-O thin films for flexible devices

Transparent conductive amorphous Cd-In-Sb-O thin films were deposited on a flexible polyethylene naphthalate film by rf magnetron sputtering at room temperature. The large Hall mobility of ∼26 cm2 V−1 s−1 was observed on the films with carrier density >1020 cm−3. The carrier density varied from the order of 1020 to 1017 cm−3 with increasing the oxygen partial pressure. The Hall mobility reached up to ∼17 cm2 V−1 s−1, even at carrier density of ∼1017 cm−3. Flexible transparent filed-effect transistor was also fabricated using the Cd-In-Sb-O thin films as a channel layer and the device performance was investigated. The device exhibited a field-effect mobility of ∼0.45 cm2 V−1 s−1 and an on-off ratio of ∼102 at room temperature.