کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690798 | 1011277 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transparent amorphous conductive Cd-In-Sb-O thin films for flexible devices
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Transparent conductive amorphous Cd-In-Sb-O thin films were deposited on a flexible polyethylene naphthalate film by rf magnetron sputtering at room temperature. The large Hall mobility of â¼26Â cm2Â Vâ1Â sâ1 was observed on the films with carrier density >1020Â cmâ3. The carrier density varied from the order of 1020 to 1017Â cmâ3 with increasing the oxygen partial pressure. The Hall mobility reached up to â¼17Â cm2Â Vâ1Â sâ1, even at carrier density of â¼1017Â cmâ3. Flexible transparent filed-effect transistor was also fabricated using the Cd-In-Sb-O thin films as a channel layer and the device performance was investigated. The device exhibited a field-effect mobility of â¼0.45Â cm2Â Vâ1Â sâ1 and an on-off ratio of â¼102 at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 80, Issue 9, 20 June 2006, Pages 1038-1041
Journal: Vacuum - Volume 80, Issue 9, 20 June 2006, Pages 1038-1041
نویسندگان
Hiroyuki Tetsuka, Yue Jin Shan, Keitaro Tezuka, Hideo Imoto,