Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering

Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)Nx bonded structure to the (Si,C)3N4 bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp3-hybridization of carbons bonds.

► SiCN films were prepared by plasma assisted RF magnetron sputtering.
► The films were treated by electron beams irradiation.
► The formation of (Si, C)3N4 phase enhanced hardness of films prepared at low pressure.
► The sp3-hybridization of carbons bonds enhanced hardness of films prepared at high pressure.