کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690843 | 1011279 | 2010 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of Cu layer thickness on the structural, optical and electrical properties of AZO/Cu/AZO tri-layer films Effect of Cu layer thickness on the structural, optical and electrical properties of AZO/Cu/AZO tri-layer films](/preview/png/1690843.png)
Highly conducting AZO/Cu/AZO tri-layer films were successfully deposited on glass substrates by RF magnetron sputtering of Al-doped ZnO (AZO) and ion-beam sputtering of Cu at room temperature. The microstructures of the AZO/Cu/AZO multilayer films were studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM). X-Ray diffraction measurements indicate that the AZO layers in the tri-layer films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. With the increase of Cu thickness, the crystallinity of AZO and Cu layers is simultaneously improved. When the Cu thickness increases from 3 to 13 nm, the resistivity decreases initially and then varies little, and the average transmittance shows a first increase and then decreases. The maximum figure of merit achieved is 1.94 × 10−2 Ω−1 for a Cu thickness of 8 nm with a resistivity of 7.92 × 10−5 Ω cm and an average transmittance of 84%.
Journal: Vacuum - Volume 85, Issue 1, 23 July 2010, Pages 39–44