Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using He-SiH4 mixture

► It is deposited helium based hydrogenated silicon thin film with high pressure depletion (HPD) condition. ► We could find a depletion point using optical emission spectroscopy (OES). ► Hydrogen comes from SiH4 using He-SiH4 mixture so we tried to explain how SiH4 dissociated and contribute to deposition.