Room temperature synthesis of nanocrystalline silicon by aluminium induced crystallization for solar cell applications

The aim of this study is to synthesis large area, plastic compatible of p-type nanocrystalline silicon through conventional sputter system. The growth of and p-type doping of nanocrystalline silicon onto plastic substrates using D.C. magnetron sputtering was investigated. The film properties were examined by Raman spectroscopy, X-ray Diffraction, scanning electron microscopy and energy dispersive spectrometry. Nanocrystalline silicon was achieved with careful control of ion bombardment energy. Through a narrow experimental, window room temperature, nanocrystalline silicon can be synthesised on aluminium. It is believed the aluminium reduces the required energy for crystallite nucleation. PN junction was formed through sputtering of Al/Al–Si/n-type Si/AZO structure. The I–V characteristic showed good rectifying behaviour and confirms p-type doping via aluminium induced crystallization.

► Direct synthesis of nanocrystalline silicon on plastic using AIC process.
► Flexible photovoltaic device fabricated.
► Compatible with industrial process (sputter).
► Can be scaled to large scale deposition process.
► Eliminate the need for hazardous boron doping of p-type silicon.