کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690919 | 1011284 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of nitrogen diluted hydrogenated amorphous carbon (n-type a-C:H) films and their realization in n-type a-C:H/p-type crystalline silicon heterojunction diodes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties of nitrogen diluted hydrogenated amorphous carbon (n-type a-C:H) films and their realization in n-type a-C:H/p-type crystalline silicon heterojunction diodes Properties of nitrogen diluted hydrogenated amorphous carbon (n-type a-C:H) films and their realization in n-type a-C:H/p-type crystalline silicon heterojunction diodes](/preview/png/1690919.png)
چکیده انگلیسی
Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) films were grown in an asymmetric rf PECVD system using C2H2 and N2 gaseous mixture. Deposition rate, stress, hardness, optical bandgap, refractive index, and electrical characteristics have been studied as a function of self bias. Microstructures of these films were also studied using LASER Raman technique. Finally nitrogen diluted a-C:H films were realized as n-type semiconductor in n-type a-C:H/p-type crystalline silicon hetrojunction diodes. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics have also been studied as a function of self bias on these heterojunction diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 84, Issue 7, 4 March 2010, Pages 882–889
Journal: Vacuum - Volume 84, Issue 7, 4 March 2010, Pages 882–889
نویسندگان
Sushil Kumar, Neeraj Dwivedi, C.M.S. Rauthan, O.S. Panwar,