کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690947 | 1011285 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Catalyst-free ZnO nanowires grown on a-plane GaN
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17Â K exhibited near-band-edge emission at 372Â nm with a full width at half maximum of 10Â nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 84, Issue 6, 4 February 2010, Pages 803-806
Journal: Vacuum - Volume 84, Issue 6, 4 February 2010, Pages 803-806
نویسندگان
C.W. Chen, C.J. Pan, F.C. Tsao, Y.L. Liu, C.W. Kuo, C.H. Kuo, G.C. Chi, P.H. Chen, W.C. Lai, T.H. Hsueh, C.J. Tun, C.Y. Chang, S.J. Pearton, F. Ren,