Control of the bias voltage in d.c. PVD processes on insulator substrates

In plasma-PVD processes, ion bombardment during the growth of thin films has a strong influence on films properties such as morphology, composition, structure, stress, electrical conductivity, and others. Therefore, an accurate control of substrate bias voltage is needed in order to deposit films with the desired properties. For insulator substrates, dc biasing the substrate holder is useless, since the surface shall not follow the applied bias but it will be at the non-controlled floating potential.In this work we present a simple method for the effective control of the substrate bias in dc PVD processes with insulator substrates, based on placing a metallic grid at a certain distance from the non-conductive surfaces to be coated. The desired negative bias is applied to this metallic grid which accelerates ions from the plasma and directs them to the surface to cover. This method has been successfully applied to the deposition of TiN coatings on glass and decorative ceramics by Cathodic Arc Deposition. The deposited films showed good adhesion and gold color, in contrast with the bad adhered and brownish films deposited without the grid. The dependencies on the color and on the mechanical properties of our TiN films deposited on insulating substrates with the value of the bias voltage applied to the substrate are similar to those typically reported in the literature when conductive substrates are used.