کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690997 | 1011290 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanostructure, electrical and optical properties of p-type hydrogenated nanocrystalline silicon films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In this paper, p-type hydrogenated nanocrystalline (nc-Si:H) films were prepared on corning 7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films were deposited with radio frequency (RF) (13.56 MHz) power and direct current (DC) biases stimulation conditions. Borane (B2H6) was a doping agent, and the flow ratio η of B2H6 component to silane (SiH4) was varied in the experimental. Films' surface morphology was investigated with atomic force microscopy (AFM); Raman spectroscopy, X-ray diffraction (XRD) was performed to study the crystalline volume fraction Xc and crystalline size d in films. The electrical and optical properties were gained by Keithly 617 programmable electrometer and ultraviolet-visible (UV-vis) transmission spectra, respectively. It was found that: there are on the film surface many faulty grains, which formed spike-like clusters; increasing the flow ratio η, crystalline volume fraction Xc decreased from 40.4% to 32.0% and crystalline size d decreased from 4.7 to 2.7 nm; the optical band gap Egopt increased from 2.16 to 2.4 eV. The electrical properties of p-type nc-Si:H films are affected by annealing treatment and the reaction pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 85, Issue 6, 11 January 2011, Pages 649-653
Journal: Vacuum - Volume 85, Issue 6, 11 January 2011, Pages 649-653
نویسندگان
Liqiang Guo, Jianning Ding, Jichang Yang, Zhiyong Ling, Guanggui Cheng, Ningyi Yuan, Shubo Wang,