کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691173 1011299 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural damage in ZnO bombarded by heavy ions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Structural damage in ZnO bombarded by heavy ions
چکیده انگلیسی

The effect of implantation parameters on damage build-up in ZnO bombarded with Bi and Er ions is studied by Rutherford backscattering/channelling spectrometry. The results show that the damage accumulation behaviour in ZnO is different dramatically from that in other semiconductors. In particular, a variation of implantation parameters, such as collision cascade density, sample temperature and ion flux, has only a minor influence on the damage accumulation in the crystal bulk for the case of such heavy ions. Moreover, an intermediate damage peak, between the surface and bulk defect peaks, is observed for all the irradiation conditions studied. The cascade density affects the behaviour of this intermediate peak with increasing ion dose.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 84, Issue 8, 24 March 2010, Pages 1058–1061
نویسندگان
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