کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691188 1011300 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Contribution study of properties of copper indium diselenide thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Contribution study of properties of copper indium diselenide thin films
چکیده انگلیسی
Stoichiometric powder of CuInSe2 (CIS) was prepared from molten stoichiometric quantities of the elements. The structure analyzed by X-ray diffraction powder (XRD), shows mainly the chalcopyrite phase. CIS polycrystalline thin films deposited from this powder have been grown on glass substrates in vacuum by thermal evaporation method. The structural and electrical properties of both as-deposited and annealed films were studied using X-ray diffraction and dark conductivity measurements respectively. As-prepared films at room temperature showed an amorphous structure. However, the chalcopyrite structure with (112) preferential orientation was observed after annealing in vacuum at 400 °C during 30 min. The influence of the annealing process on the dark conductivity of the films was also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1194-1197
نویسندگان
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