کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691195 | 1011300 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and optical spectrum of GaN nanorods produced on Si(111) substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
A novel method is applied to prepare nanorods. In this method, nanorods have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Nb films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The results show that the nanorod is single-crystalline GaN. It has a diameter of about 200 nm and lengths typically up to several micrometers. Photoluminescence spectrum under excitation at 325 nm only exhibits a UV light emission peak is located at about 368.5 nm. Finally, the growth mechanism of nanorods is also briefly discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1224-1228
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1224-1228
نویسندگان
Hui-Zhao Zhuang, Bao-Li Li, Cheng-Shan Xue, Shi-Ying Zhang, De-Xiao Wang, Jia-Bin Shen,