Electron field emission from microtip arrays

Electron field emission measurements from structurized cathodes was reported. Silicon (Si) and boron-doped silicon carbide (SiC:B) had been chosen as a base materials for microtip field emission arrays (FEA). Each of single silicon FEAs has been covered by a thin metal layer using chromium (Cr), titanium (Ti) or platinum (Pt) to reduce the threshold voltage of electron emission. Surface of boron-doped silicon carbide and silicon FEAs have also been modified by deposition of multi-walled carbon nanotubes (MWNT). These efforts let improved the emission currents and bring down the turn-on field down to 1.2 V/μm. In contrast to the above, plain cold cathodes prepared as porous silicon (PS) substrates covered by thin MWNTs have also been measured.