کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691335 | 1011309 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition](/preview/png/1691335.png)
چکیده انگلیسی
In an effort to increase the crystalline fraction of silicon films directly deposited on a glass substrate by hot-wire chemical vapor deposition, the effect of HCl addition was studied. The silicon film was deposited on a glass substrate at 320 °C under a reactor pressure of 1333 Pa at the wire temperature of 1600 °C with 10%SiH4-90%He at a fixed flow rate 100 standard cubic centimeter per minute (sccm) and HCl varied at 0, 10, 16 and 28 sccm. With increasing HCl, the crystalline fraction of silicon was increased as revealed by Raman spectra but the growth rate was decreased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 83, Issue 12, 11 August 2009, Pages 1431-1434
Journal: Vacuum - Volume 83, Issue 12, 11 August 2009, Pages 1431-1434
نویسندگان
Yung-Bin Chung, Dong-Kwon Lee, Chan-Soo Kim, Nong-Moon Hwang,