کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691397 1011314 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of a magnetron sputtering system with an extraordinary strong magnetic field near the target
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Development of a magnetron sputtering system with an extraordinary strong magnetic field near the target
چکیده انگلیسی
We have developed a planar sputtering device that uses a melt-processed bulk superconductor to generate the magnetic field. The magnetic field that confines the plasma above the sputtering target is about 1.0 T, which is about 20 times larger than the field normally used for magnetron sputtering. Because of the large magnetic field, discharge at an Ar gas pressure as low as 10−3 Pa was possible. In this study, we used the ultra-strong-field sputtering technique for depositing Ga-doped ZnO which is attracting interest as a transparent electrode material. We also studied the effect of employing an auxiliary coil to tailor the magnetic field distribution and discuss how the discharge characteristic had changed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 83, Issue 3, 15 October 2008, Pages 475-478
نویسندگان
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