کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691462 1011315 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures
چکیده انگلیسی
Unusual properties of the diluted nitrides AIIIBV-N make them very attractive in the point of view of fundamental investigations and practical applications. This work presents the growth characteristics and properties of the undoped GaAs1−xNx/GaAs heterostructures obtained by the atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The properties of the heterostructures were examined using high-resolution X-ray diffraction (HRXRD), photoreflectance spectroscopy (PR), photoluminescence (PL), photovoltage spectroscopy (PVS) and mercury probe C-V set-up with an HP 4192A impedance analyser (5 Hz-13 MHz). The maximum nitrogen content in GaAs1−xNx epilayers, determined from PR spectra, did not exceed 1.74%. The influence of the growth temperature (Tg) and the nitrogen source concentration in gas phase (Xg) on the properties of the GaAs1−xNx/GaAs heterostructures is presented and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 4, 12 December 2007, Pages 377-382
نویسندگان
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