Boron implantation effects in CdS thin films grown by chemical synthesis

CdS thin films grown on ITO/glass substrates by using chemical bath (CB) were boron-implanted employing 100 keV beam of boron ions (B+) with fluences in the range 1.0×1015–1.0×1016 ions/cm2. The B doping was successfully carried out, as was proved by the major carrier density introduced in the range 0.8×1018–5.4×1018 cm−3, which was calculated from thermo power measurements. Raman spectroscopy results support the assumption that triply ionized boron (B3+) enters into the CdS lattice occupying Cd2+ sites, which create shallow donor levels in the forbidden energy band gap.